Taiwan MITSUBISHI RF MOSFET Power Amplifier Module. Taipei Manufacturer, Exporter

Brand Name:

MITSUBISHI

Primary Competitive Advantages:

Brand-name Parts
Country of Origin
Distributorships Offered
Experienced Staff
Green Product
International Approvals
Price
Prompt Delivery
Quality Approvals
Reputation
Service
Small Orders Accepted

Main Export Markets:

Eastern Europe
North America
Mid East/Africa
Central/South America
Asia
Western Europe
Australasia
South Africa / Russia

Key Specifications/Special Features:

Silicon RF Power Semiconductors
High Frequency Devices
Si RF Power Module
Low Output Power Si MOS FET Module
Features:
1. Enhancement-Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 7.2V, VGG = 0V)
2. Pout >38dBm @ VDD = 7.2V, Pin = 19dBm
3. ηT > 35% @ VDD = 7.2V, Pout = 38dBm (Pin adjust.)
4. IMD3 < -25dBc @ VDD = 7.2V, Pout (average) = 35dBm (Pin adjust.)
5. Broadband Frequency Range: 350-400MHz
6. Low-Power Adjust. Current IGG = 1mA (typ) at VGG = 3.5V
7. Module Size: 30 x 10 x 5.4mm
Drain Voltage(VDD)(Max.ratings): 9.2V(VGG < 3.5V)
Gate Voltage(VGG1)(Max.ratings): 4V(VDD < 7.2V , Pin = 0mW)
Gate Voltage(VGG2)(Max.ratings): 4V(VDD < 7.2V , Pin = 0mW)
Input Power(Pin)(Max.ratings): 100mW(f = 350-400MHz , ZG = ZL = 50Ω)
Output Power(Pout)(Max.ratings): 10W(f = 350-400MHz , ZG = ZL = 50Ω)
Frequency Range(f): 350-400MHz
Drain Voltage(VDD): 7.2V
Input Power(Pin): 80mW
Output Power(Pout)(Min): 38dBm(VDD = 7.2V , Pin (Single Carrier) = +19dBm)
Total Efficiency(ηT)(Min): 35%(VDD = 7.2V , Pout (Single Carrier) = 38dBm (Pin adjust.))
Gata Current(IGG)(Typ.): 1mA(VDD = 7.2V , Pout (Single Carrier) = 38dBm (Pin adjust.))
Operation Case Temperature Range(Tcase)(op): -30°C to +90°C
Storage Temperature(Tstg): -40°C to +110°C
Brand Name: MITSUBISHI
Lead-Free Type
RoHS Compliant
Mounting Type: Through Hole / DIP(Dual in -line package)
Package Outline: H54
Lead Count: 6
Packing: Antistatic tray, 50 modules / tray
UHF 300-500MHz / Low-Output Power Part Number: RA03M3540MD, RA03M4043MD, RA03M4547MD, RA07H3340M, RA07H4047M, RA07H4452M, RA07M3340M, RA07M3843M, RA07M4047M, RA07M4047MSA, RA07M4452M, RA07M4452MSA, RA07N3340M, RA07N4047M, RA07N4452M
Compatible with many other wireless communication products
Mass stock on-hand merchandise supply
We supply various electronic components and welcome your inquiries

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Payment Details:

Payment Terms:
- Telegraphic Transfer(TT, T/T) , Western Union
Minimum Order:
- 1 to 99 Pieces

Delivery Details:

FOB Port:
- Taiwan

MITSUBISHI RF MOSFET Power Amplifier Module

MITSUBISHI RF MOSFET Power Amplifier Module, 350-400MHz, 38dBm, 7.2V, 2 Stage Amp, H54