Taiwan RF MOSFET Power Amplifier Module. Taipei Manufacturer, Exporter

Brand Name:

MITSUBISHI

Primary Competitive Advantages:

Prompt Delivery
Quality Approvals
Service

Main Export Markets:

Eastern Europe
North America
Mid East/Africa
Central/South America
Asia
Western Europe
Australasia

Key Specifications/Special Features:

Silicon RF Power Semiconductors
High Frequency Devices
Si RF Power Module
High Output Power Si MOS FET Module
Features:
1. Enhancement-Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V, VGG = 0V)
2. Pout > 60W, ηT > 45% @ VDD = 12.5V, VGG = 5V, Pin = 50mW
3. Broadband Frequency Range: 136-174MHz
4. Low-Power Control Current IGG = 1mA (typ) at VGG = 5V
5. Module Size: 67 x 18 x 9.9mm
Drain Voltage(VDD)(Max.ratings): 17V(VGG < 5V)
Gate Voltage(VGG)(Max.ratings): 5.5V(VDD < 12.5V, Pin = 0mW)
Input Power(Pin)(Max.ratings): 100mW(f = 136-174MHz , ZG = ZL = 50Ω)
Output Power(Pout)(Max.ratings): 80W(f = 136-174MHz , ZG = ZL = 50Ω)
Frequency Range(f): 136-174MHz
Drain Voltage(VDD): 12.5V
Input Power(Pin): 50mW
Output Power(Pout)(Min): 60W(VDD = 12.5V , VGG = 5V , Pin = 50mW)
Total Efficiency(ηT)(Min): 45%(VDD = 12.5V , VGG = 5V , Pin = 50mW)
Gata Current(IGG)(Typ.): 1mA(VDD = 12.5V , VGG = 5V , Pin = 50mW)
Operation Case Temperature Range(Tcase)(op): -30°C to +100°C
Storage Temperature(Tstg): -40°C to +110°C
Brand Name: MITSUBISHI
Lead-Free Type
RoHS Compliant
Mounting Type: Through Hole / DIP(Dual in -line package)
Package Outline: H2M
Lead Count: 5
Packing: Antistatic tray, 10 modules / tray
VHF 50-300MHz / High-Output Power Part Number: RA13H1317M, RA30H0608M, RA30H1317M, RA30H1317M1, RA30H1721M, RA30H2127M, RA33H1516M1, RA35H1516M, RA60H1317M, RA60H1317M1A.
Compatible with many other wireless communication products
Mass stock on-hand merchandise supply
We supply various electronic components and welcome your inquiries

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RF MOSFET Power Amplifier Module

RF MOSFET Power Amplifier Module, RoHS Compliant, 136-174MHz, 60W, 12.5V, 2 Stage Amp, H2M