|
|
|
MITSUBISHI RF MOSFET Power Amplifier Module
|
| Product Details |
 |
|
Larger photo
|
|
Larger photo
|
|
|
MITSUBISHI RF MOSFET Power Amplifier Module, 135-175MHz, 60W, 12.5V, 3-Stage Amp, H2S
Model Number: RA60H1317M
|
|
|
Brand Name:
Primary Competitive Advantages:
- Brand-name Parts
- Country of Origin
- Distributorships Offered
- Experienced Staff
- Green Product
- International Approvals
- Price
- Prompt Delivery
- Quality Approvals
- Reputation
- Service
- Small Orders Accepted
Main Export Markets:
- Eastern Europe
- North America
- Mid East/Africa
- Central/South America
- Asia
- Western Europe
- Australasia
- South Africa / Russia
| |
Key Specifications/Special Features:
- Silicon RF power semiconductors
- High frequency devices
- Si RF power module
- High output power Si MOS FET module
- Features:
- Enhancement-Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V, VGG = 0V)
- Pout > 60W, ηT > 40% @ VDD = 12.5V, VGG = 5V, Pin = 50mW
- Broadband Frequency Range: 135-175MHz
- Low-Power Control Current IGG = 1mA (typ) at VGG = 5V
- Module Size: 66 x 21 x 9.88mm
- Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
- Drain Voltage(VDD)(Max.ratings): 17V(VGG < 5V)
- Gate Voltage(VGG)(Max.ratings): 6V(VDD < 12.5V, Pin = 0mW)
- Input Power(Pin)(Max.ratings): 100mW(f = 135-175MHz , ZG = ZL = 50Ω)
- Output Power(Pout)(Max.ratings): 75W(f = 135-175MHz , ZG = ZL = 50Ω)
- Frequency Range(f): 135-175MHz
- Drain Voltage(VDD): 12.5V
- Input Power(Pin): 50mW
- Output Power(Pout)(Min): 60W(VDD = 12.5V , VGG = 5V , Pin = 50mW)
- Total Efficiency(ηT)(Min): 40%(VDD = 12.5V , VGG = 5V , Pin = 50mW)
- Gata Current(IGG)(Typ.): 1mA(VDD = 12.5V , VGG = 5V , Pin = 50mW)
- Operation Case Temperature Range(Tcase)(op): -30°C to +110°C
- Storage Temperature(Tstg): -40°C to +110°C
- Brand Name: MITSUBISHI
- Lead-Free Type
- RoHS Compliant
- Mounting Type: Through Hole / DIP(Dual in -line package)
- Package Outline: H2S
- Lead Count: 5
- Packing: Antistatic tray, 10 modules / tray
- VHF 50-300MHz / High-Output Power Part Number: RA13H1317M, RA30H0608M, RA30H1317M, RA30H1317M1, RA30H1721M, RA30H2127M, RA33H1516M1, RA35H1516M, RA60H1317M, RA60H1317M1A
- Compatible with many other wireless communication products
- Mass stock on-hand merchandise supply
- We supply various electronic components and welcome your inquiries
Payment Details:
- Payment Terms:
- Telegraphic Transfer(TT, T/T) , Western Union
- Minimum Order:
Delivery Details:
|
|
|
|
|
|
|
|
| More
Information |
|
|
|
|
|
|
|
|
|
| Contact Details |
|
|
|
|
For a better response,
- Introduce yourself and your company
- Indicate your requirements
View sample
Enter between 20 to 1500 characters
|
|
|
Key Contact:
Mr
Chang,
Paul
General Manager
Mr
|
|
|
|
Supplier and product information updated April 27, 2012.
|
|
|
|
|
|
|
|
|
| Other categories you may find interesting |
|
|
|
|
|
|
|
|
